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Keynote & Plenary Speakers

Keynote Speakers

Speech Date 17/07/12 10:10~10:50 Speech Place Room 301
Speaker Franco Nori  CV
AffiliationRIKEN, University of Michigan
TitleNano-Electronics using Quantum Circuits as Artificial Atoms on a Chip
Contents
Recent technological advances have made it possible to implement atomic-physics and quantum-optics experiments on a chip using artificial atoms. These artificial atoms can be made from either semiconductor quantum dots and, more often, from superconducting circuits. Superconducting circuits based on Josephson junctions exhibit macroscopic quantum coherence and can behave like artificial atoms. Novel electronic devices are being explored with these type of superconducting (low-power-consumption) electronics. This talk presents a pedagogical (and, hopefully, entertaining) brief introduction to this rapidly advancing field. The references [1-13] provide a few overviews on various aspects of this subject and related topics

References

[1] J.Q. You, F. Nori, Atomic Physics and Quantum Optics using Superconducting Circuits, Nature, 474, 589 (2011). (a nine-pages overview of this field).

[2] J.Q. You, F. Nori, Superconducting circuits and quantum information, Physics Today 58 (11), 42 (2005).

[3] I. Buluta, F. Nori, Quantum Simulators, Science 326, 108 (2009).

[4] I. Buluta, S. Ashhab, F. Nori, Natural and artificial atoms for quantum computation, Reports on Progress in Physics 74, 104401 (2011).

[5] F. Nori, Atomic physics with a circuit, Nature Physics 4, 589 (2008).

[6] F. Nori, Quantum football, Science 325, 689 (2009).

[7] S.N. Shevchenko, S. Ashhab, F. Nori, Landau-Zener-Stuckelberg interferometry, Physics Reports 492, 1 (2010). (about 50-50 split of review and original work)

[8] P.D. Nation, J.R. Johansson, M.P. Blencowe, F. Nori, Stimulating uncertainty: Amplifying the quantum vacuum with superconducting circuits, Rev. Mod. Phys., 84, 1-24 (2012).

[9] I. Georgescu, F. Nori, Quantum technologies: an old new story, Physics World 25, 16-17 (2012).

[10] A.G. Kofman, S. Ashhab, F. Nori, Weak pre- and post-selected measurements, Physics Reports 520, 43-133 (2012) (about 20 pages review, plus 70 pages of original work).

[11] Z.-L. Xiang, S. Ashhab, J.Q. You, F. Nori, Hybrid quantum circuits: Superconducting circuits interacting with other quantum systems, Rev. Mod. Phys. 85, 623 (2013).

[12] C. Emary, N. Lambert, F. Nori, Leggett-Garg Inequalities, Reports on Progress in Physics 77, 016001 (2014).

[13] I. Georgescu, S. Ashhab, F. Nori, Quantum Simulation, Rev. Mod. Phys. 86, 153 (2014). Also the cover,

Speech Date 17/07/12 13:30~14:10 Speech Place Room 301
Speaker Sung Wook Park  CV
AffiliationSK Hynix
TitleThe Future of Memory: Driven by Materials
Contents
Today, the Memory industry is expanding from conventional PC and mobile to new devices and cloud computing. The advent of Memory devices led to more diversified applications and such trend is expected to continue as more needs are generated with AI and Ubiquitous. In particular, Convergence and Connectivity are expected to become the driving forces behind the growth of the entire Memory market.
Current Memory technologies, which continuously are expected to enable the development of devices and to respond to the ever changing trend, are facing a number of challenges, notably, in device scaling, and in satisfying the need for high-density devices and low-power consumption.
Two pillars of Memory devices today, DRAM and NAND Flash, are facing an eminent technological challenges. Therefore, in a short-term, new materials for the memories are needed in order to overcome those challenges. Due to the exponential rise in the aspect ratio of capacitors, mechanical stability drops. As DRAM technology node scales down, controlling the contact resistance within the cell becomes all the more important. As NAND development platform shifts from 2D to 3D, high-reliability and performance of product is required. In order to ensure product continuity, two-pronged approach, increasing stack and implementing multi bit, can be the way forward. But to increase the stack, considering the characteristic of the devices, film stress control is needed, and to implement multi bit, an innovation in Dielectric Material (Oxide / Nitride / High-K) is needed.
In addition, in a mid to long term, the development of New Memory, which can replace the conventional memory, is underway. The development of materials will surely determine the commercialization of the New Memory. PCRAM, one of the next generation non-volatile memory, uses rapid and reversible phase transition of chalcogenide, and phase-change materials (such as Ge2Sb2Te5). The requirements for phase change materials are the following; high speed and low Ireset PCM, high thermal stability after integration, void-free gap fill in hole/slit, no residues after PCM isolation process (etch, CMT, etc.
In this presentation, I would like to look into some of the challenges Memory devices face in detail, and talk about what could be the viable ways moving forward from a material perspective.

Plenary Speakers

Speech Date 17/07/13 10:15~11:00 Speech Place Room 301
Speaker Hongjie Dai  CV
AffiliationStanford University
TitleNanosciences for Biological and Energy Systems
Contents
This talk will review our work on carbon nanotube and graphene-based nanoscience with a focus on interfacing these novel nanocarbons with biological systems. I will first briefly review our earlier work of carbon nanotubes for biological applications with a focus on our work on fluorescence imaging in the previously unexplored 1000-1700 nm NIR-II window to benefit from greatly suppressed photon scattering at long wavelengths. We show that NIR-II imaging is novel with up to ~ 4 mm tissue depth capable of sub-10 micron spatial resolution, using a wide range of fluorescent agents including carbon nanotubes, AgS2 quantum dots, donor-acceptor conjugated polymers and small organic molecules emitting in the 1000-1700nm range. NIR-II imaging is capable of video-rate imaging with dynamic contrast to quantitate blood flows in both normal and ischemic vessels, fast frame rate for revealing the blood flow pattern within a single cardiac-cycle of a mouse, and through-skull imaging of the brain of a mouse without craniotomy to investigate stroke models. These work clearly showed the advantage of NIR-II imaging over traditional NIR imaging near 800 nm due to much reduced photon scattering of long, up to 1700 nm wavelength light by tissues and ultra-low indigenous background of biological systems in this range, thus opening new possibilities in biological and medical imaging.
The second part of the talk will focus on our work on advancing new types of electrocatalysts for renewable catalyst applications. I will talk about achieving record setting performance of electrocatalysts for water splitting including HER and OER. We have developed a novel Ni/NiO heterostructured hydrogen evolution reaction (HER) catalyst with near zero overpotential. The nanoscale nickel oxide/nickel NiO/Ni hetero-structures formed on carbon nanotube sidewalls are highly effective electrocatalysts for hydrogen evolution reaction with activity similar to Pt with near zero overpotential in HER onset in basic solutions. We have also developed a NiFe layered double hydroxide (NiFe LDH) oxygen evolution reaction (OER) catalyst with ~ 250mV overpotential, which was among the most active OER catalyst in basic solutions. The NiFe LDH exhibited higher OER catalytic activity and stability than commercial Ir based catalysts. Using the highly active Ni/NiO HER and NiFe LDH catalyst, we recently achieved enabling water splitting using a record low voltage of < 1.5 volt, making it possible to make an electrolyzer for hydrogen and oxygen gas generation running on a single AAA alkaline battery cell. Lastly, I will present our latest development of rechargeable Al ion battery.

Speech Date 17/07/14 10:15~11:00 Speech Place Room 301
Speaker Lei Jiang  CV
AffiliationChinese Academy of Sciences
TitleSmart Interfacial Materials from Super-Wettability to Binary Cooperative Complementary Systems
Contents
Learning from nature and based on lotus leaves and fish scale, we developed super-wettability system: superhydrophobic, superoleophobic, superhydrophilic, superoleophilic surfaces in air and superoleophobic, superareophobic, superoleophilic, superareophilic surfaces under water [1]. Further, we fabricated artificial materials with smart switchable super-wettability [2], i.e., nature-inspired binary cooperative complementary nanomaterials (BCCNMs) that consisting of two components with entirely opposite physiochemical properties at the nanoscale, are presented as a novel concept for the building of promising materials [3-4].
The smart super-wettability system has great applications in various fields, such as self-cleaning glasses, water/oil separation, anti-biofouling interfaces, and water collection system [5].
The concept of BCCNMs was further extended into 1D system. Energy conversion systems that based on artificial ion channels have been fabricated [6]. Also, we discovered the spider silk’s and cactus's amazing water collection and transportation capability [7], and based on these nature systems, artificial water collection fibers and oil/water separation system have been designed successfully [8].
Learning from nature, the constructed smart multiscale interfacial materials system not only has new applications, but also presents new knowledge: Super wettability based chemistry including basic chemical reactions, crystallization, nanofabrication arrays such as small molecule, polymer, nanoparticles, and so on [9].

References
[1] (a) Adv. Mater. 2014, 26, 6872-6897.. (b) J. Am. Chem. Soc. 2016, 138, 1727-1748.
[2] Adv. Mater. 2008, 20 (15), 2842-2858.
[3] Pure Appl. Chem. 2000, 72 (1-2), 73-81.
[4] Small. 2015, 11, 1071-1096.
[5] Adv. Mater. 2011, 23 (6), 719-734.
[6] (a)Chem. Soc. Rev. 2011, 40 (5), 2385-2401; (b) Acc. Chem. Res. 2013, 46 (12), 2834-2846; (c) Adv. Mater. 2010, 22 (9), 1021-1024. (d) ACS Nano 2009, 3 (11), 3339-3342; (e) Angew. Chem. Int. Ed. 2012, 51 (22), 5296-5307;
[7] (a) Nature 2010, 463 (7281), 640-643; (b) Nat Commun 2012, 3, 1247.
[8] (a) Nat Commun 2013, 4, 2276; (b) Adv. Mater. 2010, 22 (48), 5521-5525.
[9] (a) Chem. Soc. Rev. 2012, 41 (23), 7832-7856; (b) Nat. Commun. 2015, 6, 6737.

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